Archive for the ‘electron microscopy’ Category

Breakthrough in Scanning Probe Microscopy (SPM) Monday, August 23rd, 2010

Scanning Probe Microscopy creates images with the help of a physical probe that scans the specimen surface. As the probe scans the specimen line by line, the position of the probe is recorded to create the image. SPM helps study invisible specimens such as individual atoms and objects of nanometer scale.

Conventional SPM operates at only one frequency at a time. This is a serious limitation because probe-specimen surface interactions are dynamic and only by knowing how the interaction varies at many frequencies can one get a fuller picture.

A breakthrough has now been achieved by Asylum Research and Oak Ridge National Laboratory (ORNL) in this area. Band Excitation (BE) is a new SPM technology that involves exciting and detecting the tip dynamics at many frequencies simultaneously. This has been compared to seeing in color instead of just in black and white.

Band Excitation allows more rapid probing of energy dissipation at nanoscale “enabling scientists to characterize a sample’s electrical, magnetic, and mechanical energy conversion and dissipation properties at standard imaging rates.” Information about energy dissipation is important in diverse fields such as electronics, information technology and energy storage/transport.

The inventors hope that BE will bring in a new family of SPMs.

Asylum Research and ORNL has been awarded the Microscopy Today Innovation Award for the breakthrough. Read the news at Nanowerk.

Atomic Scale Imaging and Analysis Systems Saturday, February 20th, 2010

FEI Company that provides electron and ion-beam microscopes and other scientific instruments for nanoscale applications has joined the Advanced Metrology Development Program at the College of Nanoscale Science and Engineering (CNSE) at the University of Albany, USA. The program is organized by SEMATECH, the global consortium of chipmakers.

The research will seek to develop high-resolution capabilities of transmission electron microscopy (TEM) analysis with electron energy loss spectroscopy (EELS) and focused ion beam (FIB) technology. The aim is to provide tools for high resolution imaging and compositional data on the scale of a few nanometres. Such tools are invaluable for defect analysis in the increasingly dense computer chips.

SEMATECH and FEI researchers will have access to the critical laboratory analytical equipment at the CNSE.

Read the full story at: BusinessWire